| 摘要 |
PROBLEM TO BE SOLVED: To provide a transistor which can prevent static electricity between the metallic layers of the transistor, a method for manufacturing the same, and a light emitting display device. SOLUTION: The light emitting display has representative constitution which has a semiconductor layer 150 formed with a 1st width W1, at least one metallic layer 156, and a 2nd metallic layer 158 formed crossing the 1st metal layer 156 with a 2nd width W2 and characterized in that the 1st width W1 of the semiconductor layer 150 is wider than the 2nd width W2 of the 2nd metal layer 158 at least where the semiconductor layer 150 and 2nd metallic layer 158 are superposed one over the other. Consequently, a source/drain metallic layer is positioned within the semiconductor layer and even when a gate metallic layer chips, static electricity can be prevented from being caused. COPYRIGHT: (C)2006,JPO&NCIPI |
