| 摘要 |
PROBLEM TO BE SOLVED: To improve on semiconductor device performance by controlling stress by treating the active region and the element isolating region as discrete objectives. SOLUTION: The semiconductor device comprises a semiconductor substrate having a p-MOS region, an element isolating region formed on the surface of the semiconductor substrate for defining a p-MOS active region in the p-MOS region, a p-MOS gate structure formed on the semiconductor substrate and extending across the p-MOS active region for defining a p-MOS channel region thereunder, a compressive stress film selectively formed on the p-MOS active region for covering the p-MOS gate electrode structure, and a stress releasing region selectively formed on the element isolating region of the p-MOS region for releasing the compressive stress film from the stress. Stresses are applied to the p-MOS channel in this method, a compressive stress in the direction of gate length, and a tensile stress in the direction of gate width. COPYRIGHT: (C)2006,JPO&NCIPI |
