| 摘要 |
PROBLEM TO BE SOLVED: To provide a pressure wave generator capable of preventing cracking and breakage of a heating element by preventing the occurrence cracking to a thermal insulation layer when the pressure wave generator is fabricated and driven and its fabricating method. SOLUTION: The pressure wave generator comprises a semiconductor substrate 1 to be a substrate, the porous thermal insulation layer 2 formed on one surface of the semiconductor substrate 1 in the thickness direction, and the thin-film heating element 3 formed on the thermal insulation layer 2 and pads 4, 4 respectively formed at both end parts of the heating element 3. A pressure wave (e.g., ultrasonic wave or the like) is produced through heat exchange between the heating element 3 and a medium (e.g., air) accompanied by energization to the heating element 3 through a pair of the pads 4, 4. The porous layer constituting the thermal insulation layer 2 is formed by anodizing a portion of a p type silicon substrate as the semiconductor substrate 1 in electrolyte and consists of a layer 21 with higher porosity on the heating element 3 side and a layer 22 with lower porosity on the semiconductor substrate 1 side. COPYRIGHT: (C)2006,JPO&NCIPI
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