| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which is prevented from a change in threshold value and equipped with a MOS transistor having high reliability against electrical stress. SOLUTION: The semiconductor device comprises a semiconductor substrate (11) wherein an element isolation region (12) for demarcating an element region is formed, a source/drain region (25) formed away from the element region of the semiconductor substrate, gate insulation films (13 and 14) formed on the element region of the semiconductor substrate, and a gate electrode (15) containing a semiconductor which is formed on the gate insulation films. The gate insulation films are a first insulation film (13) containing metal and oxygen, and a second insulation film (14) which is formed on the first insulation film and contains silicon and oxygen. The content of metal contained in the second insulation film is 6.6 atomic % at an interface with the gate electrode. COPYRIGHT: (C)2006,JPO&NCIPI
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