| 摘要 |
A plasma processing device comprising a chamber ( 1 ), a high-frequency power supply and an antenna unit ( 3 ). The antenna unit ( 3 ) comprises a slot plate ( 3 c) , a slow wave plate ( 3 b) and an antenna cover ( 3 a) . A top plate unit ( 4 ) having a flat plate ( 4 a) and sidewalls ( 4 b) is disposed at the upper portion of the chamber ( 1 ). The flat plate ( 4 a) contacts the slot plate ( 3 c) disposed to face a housed substrate ( 11 ). The sidewalls ( 4 b) are formed so as to extend toward a substrate-disposed side from the periphery of the flat plate ( 4 a) . The outer periphery surfaces of sidewalls ( 4 b) contact the chamber ( 1 ). The thickness of the sidewalls ( 4 b) is set to be at least lambda<SUB>g</SUB>/4, where lambda<SUB>g </SUB>is the wavelength of a microwave based on the permittivity of the top plate ( 4 ). Accordingly, a plasma density can be further increased and a uniformity in plasma density distribution can be improved.
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