| 发明名称 |
INTEGRATED CIRCUIT ARRANGEMENT COMPRISING A PIN DIODE, AND PRODUCTION METHOD |
| 摘要 |
Disclosed is an integrated circuit arrangement (10), among other things, comprising a pin photodiode (14) and a highly doped connecting area (62) of a bipolar transistor (58). An ingenious method allows a very deep intermediate area (30) of the pin diode (14) to be produced without autodoping in a central area. |
| 申请公布号 |
WO2006003086(A1) |
申请公布日期 |
2006.01.12 |
| 申请号 |
WO2005EP52809 |
申请日期 |
2005.06.17 |
| 申请人 |
INFINEON TECHNOLOGIES AG;LANGGUTH, GERNOT;MUELLER, KARLHEINZ;WILLE, HOLGER |
发明人 |
LANGGUTH, GERNOT;MUELLER, KARLHEINZ;WILLE, HOLGER |
| 分类号 |
H01L27/06;H01L27/146;H01L31/105 |
主分类号 |
H01L27/06 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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