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发明名称
A memory device for reducing the leakage current
摘要
申请公布号
KR100541687(B1)
申请公布日期
2006.01.12
申请号
KR20040047266
申请日期
2004.06.23
申请人
发明人
分类号
G11C7/02;G11C8/00;G11C29/00
主分类号
G11C7/02
代理机构
代理人
主权项
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