| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor laser element, wherein deterioration of element characteristics and deterioration of element lifetime are controlled, while restraining lifting of a pad electrode and an ohmic electrode, while the increase in the operating voltage of the element can be restrained. SOLUTION: The semiconductor laser element is provided with a p-type cladding layer 6 and a contact layer 7, which are formed on an active layer 3 and constitute a protruded ridge 8; the p-side ohmic electrode 9 formed on the ridge 8; a current block layer 10 which is formed on the p-type clad layer 6 formed at least on the part of the side surface of the ridge 8; a Ti layer 11 which is formed on the current block layer 10, in contact with the surface of the current block layer 10; and the p-side pad electrode 12 which is in contact with surfaces of the p-side ohmic electrode 9 and the Ti layer 11. COPYRIGHT: (C)2006,JPO&NCIPI
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