| 摘要 |
PROBLEM TO BE SOLVED: To enable a tunnel dielectric to be changed into a high quality dielectric resistant to defects, and to enhance device characteristics as well as reliability by reducing writing/deleting voltage. SOLUTION: A nonvolatile semiconductor memory device comprises a floating gate electrode 14 which is selectively formed on the main surface of a first conductivity type semiconductor substrate 11 via a first gate dielectric 13, a control gate electrode 16 formed on the floating gate electrode 14 via a second gate dielectric 15, and a second conductivity type source-drain region 18 formed on the main surface of the substrate 11 in response to each gate electrode. The first gate dielectric 13 is a three-layer structure formed of a silicon nitride film 13a which is sandwiched between silicon nitride films 13b, 13c, and the silicon nitride film 13a is a three-coordinate nitrogen bond. COPYRIGHT: (C)2006,JPO&NCIPI
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