发明名称 SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD
摘要 PROBLEM TO BE SOLVED: To form a through hole having a high aspect ratio and a small diameter in a conductive substrate whereon a semiconductor element is formed to establish continuity between front and rear surfaces of the conductive substrate without using a high-temperature process. SOLUTION: At least one through hole is formed by a laser, etc. at a predetermined place of a semiconductor or a glass substrate on the surface of which the semiconductor element and an electrical connecting portion connected to the semiconductor element are formed in advance, and an insulation layer is formed on the internal surface of the through hole by an evaporation polymerization method. Then, in order to establish continuity between the front and rear surfaces of the substrate, a conductive layer is formed by electroless plating, etc. on the internal surface of the insulation layer and in the periphery of an opening of the through hole connected thereto so that the conductive layer may be connected to the electrical connecting portion. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006012895(A) 申请公布日期 2006.01.12
申请号 JP20040183667 申请日期 2004.06.22
申请人 CANON INC 发明人 MUTA TADAYOSHI
分类号 H01L23/52;H01L21/3205 主分类号 H01L23/52
代理机构 代理人
主权项
地址