发明名称 |
Method for production of thin metal-containing layers having low electrical resistance |
摘要 |
The invention relates to a method for fabricating thin metal-containing layers ( 5 C) having low electrical resistance, firstly a metal-containing starting layer ( 5 A) having a first grain size being formed on a carrier material ( 2 ). Afterwards, a locally delimited thermal region (W) is produced and moved in the metal-containing starting layer ( 5 A) in such a way that a recrystallization of the metal-containing starting layer ( 5 A) is carried out for the purpose of producing the metal-containing layer ( 5 C) having a second grain size, which is enlarged with respect to the first grain size. A metal-containing layer having improved electrical properties is obtained in this way.
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申请公布号 |
US2006005902(A1) |
申请公布日期 |
2006.01.12 |
申请号 |
US20050512016 |
申请日期 |
2005.06.27 |
申请人 |
BARTH HANS-JOACHIM;TEWS HELMUT |
发明人 |
BARTH HANS-JOACHIM;TEWS HELMUT |
分类号 |
C22F1/00;C25D5/50;C25D7/12;H01L21/28;H01L21/3205;H01L21/768 |
主分类号 |
C22F1/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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