发明名称 Method for improving electroplating in sub-0.1um interconnects by adjusting immersion conditions
摘要 Embodiments of the invention provide methods of reducing electroplating defects by adjusting immersion conditions. For one embodiment, the immersion conditions are adjusted based upon characteristics of the substrate, including feature size. Additionally or alternatively, the immersion conditions may be adjusted based upon aspects of the electroplating process, including motion of the substrate upon immersion. Immersion conditions that may be adjusted in accordance with various embodiments of the invention include entry bias voltage/current, vertical immersion speed, and angle of immersion.
申请公布号 US2006006071(A1) 申请公布日期 2006.01.12
申请号 US20050225493 申请日期 2005.09.12
申请人 CHE GUANGLI;CHIKARMANE VINAY B;THOMAS CHRISTOPHER D;WU ROBERT I;ZIERATH DANIEL J 发明人 CHE GUANGLI;CHIKARMANE VINAY B.;THOMAS CHRISTOPHER D.;WU ROBERT I.;ZIERATH DANIEL J.
分类号 C25D21/12;B23H3/02;C25D7/12;C25D21/00 主分类号 C25D21/12
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