| 发明名称 |
Gallium nitride based Ill-V group compound semiconductor device and method of producing the same |
| 摘要 |
A gallium nitride-based III-V Group compound semiconductor device has a gallium nitride-based III-V Group compound semiconductor layer provided over a substrate, and an ohmic electrode provided in contact with the semiconductor layer. The ohmic electrode is formed of a metallic material, and has been annealed.
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| 申请公布号 |
US2006006399(A1) |
申请公布日期 |
2006.01.12 |
| 申请号 |
US20050198465 |
申请日期 |
2005.08.08 |
| 申请人 |
NICHIA CORPORATION |
发明人 |
NAKAMURA SHUJI;YAMADA TAKAO;SENOH MASAYUKI;YAMADA MOTOKAZU;BANDO KANJI |
| 分类号 |
H01L29/22;H01L21/00;H01L21/285;H01L29/20;H01L29/72;H01L33/00;H01L33/32;H01L33/38;H01L33/40;H01L33/42;H01L33/44;H01S5/00;H01S5/042;H01S5/323 |
主分类号 |
H01L29/22 |
| 代理机构 |
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