| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for realizing a semiconductor memory with which process consistency with a logic transistor and a low cost can be realized, although the semiconductor memory instead of an SRAM is requested with progress of microfabrication. <P>SOLUTION: In a semiconductor device having a logic and a memory in the same chip, a unit memory cell of the memory is provided with at least two transistors. One transistor is a writing transistor for putting in/out a stored charge, and the other transistor is a reading transistor where a conductance between a source and a drain changes depending on the stored charge which is put in/out by the writing transistor. In the semiconductor device, a gate insulating film thicker than the transistor of the logic is used for the reading transistor, and a diffusion layer structure which is the same as the logic part is used for the reading transistor. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
