| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a light-emitting device having a high transmissivity. <P>SOLUTION: The light-emitting device includes a substrate, a first nitride semiconductor stack formed on the substrate, a nitride light-emitting layer formed on the first nitride semiconductor stack, a second nitride semiconductor stack formed on the nitride light-emitting layer and a first transparent conductive oxide layer formed on the second nitride semiconductor stack. The second nitride semiconductor stack includes a plurality of hexagonal-pyramid cavities formed in an upper surface of the second nitride semiconductor stack. The plurality of hexagonal-pyramid cavities of the second nitride semiconductor stack are filled with the first transparent conductive oxide layer, and a low-resistance ohmic contact is generated on the inner surfaces of the plurality of hexagonal-pyramid cavities so as to decrease the operation voltage and improve light-emitting efficiency of the light-emitting device. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
