| 摘要 |
PROBLEM TO BE SOLVED: To improve the reliability and the performance of a semiconductor device whose gate electrode of an MISFET (Metal Insulator Semiconductor Field Effect Transistor) is formed of a metal silicide. SOLUTION: In the semiconductor device having a CMISFET (Complementary Metal Insulator Semiconductor Field Effect Transistor), the gate electrode 31a of an n-channel type MISFET (Metal Insulator Semiconductor Field Effect Transistor) 30a is formed of a metal silicide containing Ni, metal having a work function lower than that of Ni and Si while the gate electrode 31b of a p-channel type MISFET 30b is formed of the metal silicide containing Ni, metal having a work function higher than that of Ni and Si. The metal having the work function lower than that of Ni is contained in the gate electrode 31a and the metal having the work function higher than that of Ni is contained in the gate electrode 31b whereby a threshold voltage can be lowered in both of the n-channel type MISFET 30a and the p-channel type MISFET 30b. On the other hand, the gate electrodes 31a, 31b are formed by reacting a non-dope silicon film with a metal film. COPYRIGHT: (C)2006,JPO&NCIPI
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