| 摘要 |
PROBLEM TO BE SOLVED: To provide a radiation detector formed by using a silicon-on insulator technology. SOLUTION: The radiation detector comprises a silicon layer formed on an insulating substrate and having a PNPN structure, and a gate layer formed on the PNPN structure and having a PN gate. Latch-up occurs only in response to incident radiation in the radiation detector. In a second mode, the radiation detector has a silicon-on insulator PNPN diode structure and latch-up occurs only in response to incident radiation in the radiation detector. In a third mode, a silicon-on insulator radiation detector has a silicon layer formed on the insulating substrate, the silicon layer has the PNPN structure and a gate layer formed thereon, the gate layer has a PN gate, and latch-up occurs only in response to incident radiation in the radiation detector. COPYRIGHT: (C)2006,JPO&NCIPI
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