| 摘要 |
PROBLEM TO BE SOLVED: To make it possible to form a contact plug which comes certainly into contact with a diffusion layer or a gate electrode while suppressing the interlayer capacity between a first layer wiring and a diffusion layer or a gate electrode. SOLUTION: In the semiconductor device comprising the gate electrode formed in the substrate upper part and the diffusion layer formed in the both sides of the gate electrode, a conductive material film is formed in such a way that its one end may be brought into contact with the upper surface of the gate electrode and the other end may be extended to the position nearer a substrate than the gate electrode upper surface. Furthermore, an interlayer insulating film for embedding the gate electrode and the conductive material film is formed on the substrate. The contact plug is formed so as to connect with the conductive material film by penetrating the interlayer insulating film in the position of the conductive material film nearer to the substrate than the upper surface of the gate electrode. COPYRIGHT: (C)2006,JPO&NCIPI
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