发明名称 STACKED SEMICONDUCTOR MEMORY DEVICE
摘要 PROBLEM TO BE SOLVED: To reduce development costs of many kinds of memory devices. SOLUTION: This memory device has a memory cell array chip provided with a memory cell array, an interface chip which is stacked on the memory cell array chip and provided with a memory constitution switching circuit for changing an input and output bit constitution of the memory cell array, and a plurality of inter-chip wires for connecting the memory cell array chip and the interface chip. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006012337(A) 申请公布日期 2006.01.12
申请号 JP20040190317 申请日期 2004.06.28
申请人 NEC CORP;ELPIDA MEMORY INC 发明人 SAITO HIDEAKI;HAGIWARA YASUHIKO;FUKAISHI MUNEO;MIZUNO MASAYUKI;IKEDA HIROAKI;SHIBATA KAYOKO
分类号 G11C11/401;G11C5/02;G11C5/06;H01L21/20;H01L27/10;H01L27/108;H01L29/76;H01L29/94;H01L31/119 主分类号 G11C11/401
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