发明名称 |
STACKED SEMICONDUCTOR MEMORY DEVICE |
摘要 |
PROBLEM TO BE SOLVED: To reduce development costs of many kinds of memory devices. SOLUTION: This memory device has a memory cell array chip provided with a memory cell array, an interface chip which is stacked on the memory cell array chip and provided with a memory constitution switching circuit for changing an input and output bit constitution of the memory cell array, and a plurality of inter-chip wires for connecting the memory cell array chip and the interface chip. COPYRIGHT: (C)2006,JPO&NCIPI
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申请公布号 |
JP2006012337(A) |
申请公布日期 |
2006.01.12 |
申请号 |
JP20040190317 |
申请日期 |
2004.06.28 |
申请人 |
NEC CORP;ELPIDA MEMORY INC |
发明人 |
SAITO HIDEAKI;HAGIWARA YASUHIKO;FUKAISHI MUNEO;MIZUNO MASAYUKI;IKEDA HIROAKI;SHIBATA KAYOKO |
分类号 |
G11C11/401;G11C5/02;G11C5/06;H01L21/20;H01L27/10;H01L27/108;H01L29/76;H01L29/94;H01L31/119 |
主分类号 |
G11C11/401 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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