| 摘要 |
PROBLEM TO BE SOLVED: To provide a ferroelectric memory device capable of relieving current defects between bit lines. SOLUTION: The ferroelectric memory device is provided with; first and second bit lines to which a plurality of memory cells are connected; a sense amplifier connected to the first and the second bit lines; and a switch which disconnects at least one of the first and the second bit lines from the sense amplifier when the first and the second bit lines are in a short circuit state. Preferably, the switch is controlled by a program circuit having a ferroelectric capacitor. COPYRIGHT: (C)2006,JPO&NCIPI
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