Method for forming insulating film on substrate, method for manufacturing semiconductor device and substrate-processing apparatus

摘要

A substrate-processing apparatus ( 100, 40 ) comprises a radical-forming unit ( 26 ) for forming the nitrogen radicals and oxygen radicals through a high-frequency plasma, a processing vessel ( 21 ) in which a substrate (W) to be processed is held, and a gas-supplying unit ( 30 ) which is connected to the radical-forming unit. The gas-supplying unit ( 30 ) controls the mixture ratio between a first raw material gas containing the nitrogen and a second raw material gas containing oxygen, and supplies a mixture gas of a desired mixture ratio to the radical-forming unit. By supplying the nitrogen radicals and oxygen radicals mixed at the controlled mixture ratio to the surface of the substrate, an insulating film having a desired nitrogen concentration is formed on the surface of the substrate.