| 摘要 |
<P>PROBLEM TO BE SOLVED: To improve the step coverage of a dielectric film and to reduce the disposal amount of a dielectric substance. <P>SOLUTION: A semiconductor apparatus manufacturing method comprises processes of patterning a bottom electrode 11 on a base film 8; applying the dielectric substance onto the bottom electrode 11 using an ink jet-type application mechanism, forming the dielectric film 12 on the bottom electrode 11 by heating the applied dielectric substance, and forming a top electrode on the dielectric film 12. The process of forming the top electrode comprises processes of forming an interlayer insulation film on the base film 8 and on the dielectric film 12, forming an opening existing above the dielectric film in the interlayer insulation film, depositing a conductor inside the opening and on the interlayer insulation film, and forming the top electrode by removing the conductor from above the interlayer insulation film. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
