| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method for rapidly depositing a Cu<SB>2</SB>O film with the oxidation number accurately controlled, and a solar cell using the Cu<SB>2</SB>O film obtained by the film deposition method as a light absorbing layer. <P>SOLUTION: A transparent substrate 1 is introduced in a cover 26, and mixed gas with oxygen contained in argon is introduced into the cover 26. The pulse-packet shaped voltage is alternately applied to target electrodes 20A, 20B at the predetermined period to form the glow discharge. Particles are sputtered from targets 21a, 21b, and a p-layer 3 consisting of a Cu<SB>2</SB>O film is deposited on the substrate 1. The emission spectrum of plasma obtained via collimators 30a, 30b is formed into the electric signal, and taken in PEMs (Plasma Emission Monitor) 31a, 31b. The introducing flow rate of oxygen gas is controlled by using the PEMs 31a, 31b so that the emission intensity of copper in plasma is always constant. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p> |
