发明名称 |
NONVOLATILE MEMORY USING ORGANIC BISTABLE ELEMENT |
摘要 |
PROBLEM TO BE SOLVED: To provide an organic bistable element used for a nonvolatile memory. SOLUTION: An organic bistable element 10 comprises first and second metallic electrodes 11 and 16 with first and second organic layers 12 and 15 interposed between the electrodes in a state that a metallic nanocluster layer 13 is interposed between the first and second organic layers 12 and 15. The element further comprises a first electronic block layer 14 interposed between the metallic nanocluster layer 13 and the metallic electrode 16. This configuration makes it possible to obtain an organic bistable element with an improved charge retaining property. COPYRIGHT: (C)2006,JPO&NCIPI |
申请公布号 |
JP2006013491(A) |
申请公布日期 |
2006.01.12 |
申请号 |
JP20050178363 |
申请日期 |
2005.06.17 |
申请人 |
CANON INC |
发明人 |
MIYAWAKI MAMORU;LIANG GUIRONG |
分类号 |
H01L27/28;G11C11/22;G11C11/34;G11C13/00;H01L51/05 |
主分类号 |
H01L27/28 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|