METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, SYSTEM FOR CONVEYING SEMICONDUCTOR DEVICE AND IN-CONVEYANCE CONTAINER OXIDATION DEVICE

摘要

PROBLEM TO BE SOLVED: To form an oxide film whose film thickness can be controlled in a conveyance container. SOLUTION: An in-conveyance container oxidation device 10 is configured of a hoop 10a to be used as a sealed conveyance container. An environment switching means 20 for switching an environment in the hoop 10a to an oxidation environment and a non-oxidation environment as necessary is installed in the hoop 10a. The environment switching means 20 is constituted of a gas feeding pipe 21 opened in the hoop 10a, a filter 22 installed in the gas feeding pipe 21 and a gas switching valve 23. The inside of the hoop 10a is set in the oxidation environment by the environment switching means 20 while a semiconductor wafer is housed in the hoop 10a and conveyed so that an oxide film can be formed with desired film thickness. COPYRIGHT: (C)2006,JPO&NCIPI