| 摘要 |
PROBLEM TO BE SOLVED: To make a high quality display practicable in an electrooptical device by suppressing the occurrence of a photoelectric leak current without causing other malfunctions. SOLUTION: The electrooptical device is equipped with a thin film transistor constituted by including a semiconductor layer with a channel region, an electrode for display driven with the thin film transistor, an interlayer dielectric laminated on at least one side out of the upper layer side and the lower layer side of the semiconductor layer, and a light shielding film to light shield the channel region laminated on the side opposite to the semiconductor layer side of the interlayer insulating layer on a substrate. On the surface of the interlayer dielectric of the side opposite to the semiconductor layer, a hollow part locally recessed toward the semiconductor layer is formed in the region of the channel region, which light shields at least the edge part of the channel region. The light shielding film is formed at least in the hollow part. COPYRIGHT: (C)2006,JPO&NCIPI |
