| 摘要 |
PROBLEM TO BE SOLVED: To improve charge transfer efficiency by preventing a film decrease due to a flattening process of a second layer conductive film and forming a charge transfer electrode of uniform film thickness when the charge transfer electrode of a single layer electrode structure is formed. SOLUTION: The manufacturing method for a solid-state image pickup element includes a process for forming the pattern of a first layer conductive film constituting a first electrode on the surface of a semiconductor substrate where a gate oxide film is formed, a process for forming an insulating film becoming an inter-electrode insulating film at least on a side wall of the first electrode, a process for forming the second layer conductive film constituting a second electrode on the surface of the semiconductor substrate where the first electrode and the inter-electrode insulating film are formed, and a process for removing the second layer conductive film on the first electrode and flattening the film. The method also includes a process for forming a removal suppression layer on a part of an upper layer of the second layer conductive film prior to the flattening process. COPYRIGHT: (C)2006,JPO&NCIPI
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