| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of forming a semiconductor layer forming a semiconductor layer excellent in surface status and electronic characteristics. SOLUTION: A composition ratio x is 0.0942, 0.14, 0.18 or 0.30, the growth temperature of Al<SB>X</SB>Ga<SB>1-X</SB>As is set at 590°C-645°C, and the supply pressure of As is set at 0.5×10<SP>-6</SP>torr to 4.0×10<SP>-6</SP>torr, thereby enabling to form a film excellent in both surface status and electric characteristics (region 61). On the contrary, the composition ratio x is not less than 0.5, the growth temperature of Al<SB>x</SB>Ga<SB>1-x</SB>As is set at 645°C-720°C and the supply pressure of As is set at 3.5×10<SP>-6</SP>torr to 6.0×10<SP>-6</SP>torr, thereby enabling to form a film excellent in both surface status and electric characteristics (region 62). It is presumed that the composition ratio x causes the difference in optimum growth temperature, depending on the difference in surface diffusion distance between Al and Ga. COPYRIGHT: (C)2006,JPO&NCIPI
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