发明名称 |
Methods for integrating replacement metal gate structures |
摘要 |
Methods and associated structures of forming a microelectronic device are described. Those methods comprise providing a substrate comprising a first transistor structure comprising an n-type gate material and second transistor structure comprising a p-type gate material, selectively removing the n-type gate material to form a recess in the first gate structure, and then filling the recess with an n-type metal gate material.
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申请公布号 |
US2006008954(A1) |
申请公布日期 |
2006.01.12 |
申请号 |
US20050218355 |
申请日期 |
2005.09.02 |
申请人 |
KAVALIEROS JACK;BRASK JUSTIN K;DOCZY MARK L;HARELAND SCOTT A;METZ MATTHEW V;BARNS CHRIS E;CHAU ROBERT S |
发明人 |
KAVALIEROS JACK;BRASK JUSTIN K.;DOCZY MARK L.;HARELAND SCOTT A.;METZ MATTHEW V.;BARNS CHRIS E.;CHAU ROBERT S. |
分类号 |
H01L31/119;H01L21/00;H01L21/8238;H01L21/84;H01L29/76;H01L29/94;H01L31/062;H01L31/113 |
主分类号 |
H01L31/119 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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