发明名称 Semiconductor fabrication that includes surface tension control
摘要 In one embodiment, a method includes providing a semiconductor substrate that includes a memory container having a double-sided capacitor. The method also includes vapor phase etching a layer adjacent to the side wall of the memory container with a vapor having a surface tension lowering agent.
申请公布号 US2006008926(A1) 申请公布日期 2006.01.12
申请号 US20050217037 申请日期 2005.08.31
申请人 MICRON TECHNOLOGY, INC. 发明人 TOREK KEVIN;SHEA KEVIN
分类号 H01L21/00;H01L21/02;H01L21/311;H01L21/316;H01L21/8242;H01L31/119 主分类号 H01L21/00
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