| 摘要 |
An underlayer film for use in the lithography process for manufacturing semiconductor devices, which is free from intermixing with a photoresist layer, exhibiting dry etching rate higher than that of photoresist. In particular, an underlayer film forming composition for forming a porous underlayer film used for manufacturing semiconductor devices, which composition comprises a blowing agent, an organic material and a solvent, or comprises a polymer having blowing groups and a solvent. The underlayer film formed from the composition has a porous structure having pores in the interior thereof, thereby attaining high dry etching rate.
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