发明名称 |
SUSCEPTOR AND VAPOR GROWTH DEVICE |
摘要 |
<p>A susceptor (2) in which a semiconductor substrate (W) is supported approximately horizontally in a pocket (2c) when performing a vapor phase growth of a single crystal thin film on a front surface of the semiconductor substrate (W), and in which the pocket (2c) comprises an outer peripheral pocket portion (20) to support the semiconductor substrate (W) and a central side pocket portion (21) which is formed inside the outer peripheral side pocket portion (20) to be concave from the outer peripheral side pocket portion (20), wherein the outer peripheral side pocket portion (20) comprises a substrate supporting surface (20a) which is inclined with respect to a horizontal surface to be lowered toward a central side from an outer peripheral side of the pocket (2c), and a region of the substrate supporting surface (20a) excluding at least an inner peripheral edge supports a portion of a rear surface of the semiconductor substrate (W) which is inside an outer peripheral edge of the semiconductor substrate (W).</p> |
申请公布号 |
EP1615259(A1) |
申请公布日期 |
2006.01.11 |
申请号 |
EP20040720191 |
申请日期 |
2004.03.12 |
申请人 |
SHIN-ETSU HANDOTAI CO., LTD |
发明人 |
KANAYA, KOICHI;OTSUKA, TORU;OSE, HIROKI |
分类号 |
H01L21/68;C23C16/458;C30B25/12;H01L21/205;H01L21/683;H01L21/687;(IPC1-7):H01L21/205 |
主分类号 |
H01L21/68 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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