RADIATION-HARDENED TRANSISTOR FABRICATED BY MODIFIED CMOS PROCESS

摘要

An NMOS field effect transistor ( 1 ) is made radiation hard by a pair of guard band implants ( 115 ) of limited horizontal extent, extending between the source ( 30 A) and drain ( 30 B) along the edge of the transistor body, and extending only to a limited extent into the field insulator and into the interior of the transistor, leaving an unimplanted area in the center of the body that retains the transistor design threshold voltage.