Organic silicon-oxide-based film, composition and method for forming the same, and semiconductor device

摘要

A method of forming an organic silica-based film, including: applying a composition for forming an insulating film for a semiconductor device, which is cured by using heat and ultraviolet radiation, to a substrate to form a coating; heating the coating; and applying heat and ultraviolet radiation to the coating to effect a curing treatment, wherein the composition includes organic silica sol having a carbon content of 11.8 to 16.7 mol%, and an organic solvent, the organic silica sol being a hydrolysis-condensation product produced by hydrolysis and condensation of a silane compound selected from compounds shown by the general formulae (1): R 1 Si(OR 2 ) 3 , (2): Si(OR 3 ) 4 , (3): (R 4 ) 2 Si(OR 5 ) 2 , and (4): R 6 b (R 7 O) 3-b Si-(R 10 ) d -Si(OR 8 ) 3-c R 9 c .