| 摘要 |
In a pattern forming method, a photoresist layer is formed on the major surface of a to-be-processed substrate, then exposed to light to form a desired latent pattern thereon, and developed into a resist pattern. An abnormality in a size or shape of the resist pattern is detected, and is corrected. Correction is performed by irradiating the resist pattern with light of a wavelength which the photoresist layer can absorb, and changing the shape of the resist pattern. |
