发明名称 |
Group-III nitride semiconductor light-emitting diode, light-emitting diode lamp, light source, electrode for group-III nitride semiconductor light-emitting diode, and method for producing the electrode |
摘要 |
The present invention solves the problem of conventional group-III nitride semiconductor LED in that, since the LED driving current is supplied only from a pad electrode serving also as an ohmic electrode, the driving current cannot diffuse over a wide range of the light-emitting region and a group-III nitride semiconductor LED having high light emission intensity cannot be successfully provided. A group-III nitride semiconductor LED having high light emission intensity, which is fabricated using a stacked layer structure obtained by providing a surface ohmic electrode, a window layer including an electrically conducting transparent oxide crystal layer and a pad electrode on an electrically conducting substrate through a boron phosphide (BP)-based buffer layer to allow the driving current to diffuse over a wide range of the light-emitting region is provided.
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申请公布号 |
US6984851(B2) |
申请公布日期 |
2006.01.10 |
申请号 |
US20010881782 |
申请日期 |
2001.06.18 |
申请人 |
SHOWA DENKO KABUSHIKI KAISHA |
发明人 |
UDAGAWA TAKASHI |
分类号 |
H01L29/22;H01L33/14;H01L33/38;H01L33/42 |
主分类号 |
H01L29/22 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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