发明名称 Memory device having multiple array structure for increased bandwidth
摘要 One embodiment of the present invention provides a semiconductor memory including a bank of N memory arrays each having a corresponding array address, a bus providing an array address signal, a row address signal (RAS), and timing signals. The semiconductor memory further includes N tracking circuits each coupled between a different one of the N memory arrays and the bus. A first tracking circuit, in response to receiving a first array address for a first array via the array address signal and a first active state of the RAS, couples the first array to the bus such that only the first array responds to a first sequence of timing signals constituting a first bank transaction. A second tracking circuit, in response to receiving a second array address for a second array via the array address signal and a second active state of the RAS, couples the second array to the bus such that only the second array begins responding to second sequence of timing signals constituting a second bank transaction before the first bank transaction is complete.
申请公布号 US6985398(B2) 申请公布日期 2006.01.10
申请号 US20030672120 申请日期 2003.09.26
申请人 INFINEON TECHNOLOGIES AG 发明人 OH JONG-HOON
分类号 G11C8/00;G11C7/10;G11C8/12;G11C11/4076 主分类号 G11C8/00
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