PHOTORESIST COMPOSITION

摘要

The present invention provides a photoresist composition and more particularly, a photoresist composition comprising a) a novolak resin, b) a diazide compound, and c) a solvent containing propylene glycol methyl ether acetate (PGMEA) and 2,2,4-triemthyl-1,3-penthanediolmonoisobutylate (TMPMB). The photoresist composition according to the invention has excellent coating uniformity and stain inhibitory properties after coating so that it can be easily applied to real industrial fields and it can improve working environments due to the reduction of amounts to be consumed, the decrease of time to be required for manufacture, etc. when manufactured on a large scale.