| 摘要 |
Disclosed is a semiconductor device 10 comprising a first semiconductor element 11 with an arrangement of first element electrodes 12 , a second semiconductor element 13 with an arrangement of second element electrodes 14 , a connection member 15 electrically connecting together a portion 12 b of the first element electrodes 12 and the second element electrodes 14 , an insulation layer 17 covering a major surface 11 a of the first semiconductor element 11 and a backside surface 13 b of the second semiconductor element 13 , a wiring layer 22 formed on the insulation layer 17 and electrically connected to the first element electrode portion 12 b exposed in an opening portion 21 , and an external electrode 23 formed, as a portion of the wiring layer 22 , on the insulation layer 17. |
