发明名称 |
Contactless uniform-tunneling separate p-well (cusp) non-volatile memory array architecture, fabrication and operation |
摘要 |
Floating-gate field-effect transistors or memory cells formed in isolated wells are useful in the fabrication of non-volatile memory arrays and devices. A column of such floating-gate memory cells are associated with a well containing the source/drain regions for each memory cell in the column. These wells are isolated from source/drain regions of other columns of the array. Fowler-Nordheim tunneling can be used to program and erase such floating-gate memory cells either on an individual basis or on a bulk or block basis.
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申请公布号 |
US6984547(B2) |
申请公布日期 |
2006.01.10 |
申请号 |
US20030662074 |
申请日期 |
2003.09.12 |
申请人 |
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发明人 |
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分类号 |
H01L21/82;H01L21/8247;H01L27/115;H01L29/788;H01L29/792 |
主分类号 |
H01L21/82 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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