| 摘要 |
A semiconductor memory device is disclosed, which includes a memory cell array including memory cells arranged in rows and columns, a word line, a bit line, a row decoder and a column decoder, a sense amplifier provided for each of the columns of the memory cell array, a write latch circuit configured to store externally input data and sets data of one row of the memory cell array in the sense amplifiers in test mode, a read latch circuit configured to store data of one row, which is read from the memory cell array and set in the sense amplifiers in test mode, a first comparison circuit configured to compare the data stored in the write latch circuit and the data stored in the read latch circuit, and a first comparison result register configured to store a comparison result of the first comparison circuit.
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