发明名称 Method of forming a stacked device filler
摘要 Numerous embodiments of a stacked device filler and a method of formation are disclosed. In one embodiment, a method of forming a stacked device filler comprises forming a material layer between two or more substrates of a stacked device, and causing a reaction in at least a portion of the material, wherein the reaction may comprise polymerization, and the material layer may be one or a combination of materials, such as nonconductive polymer materials, for example.
申请公布号 US6984873(B2) 申请公布日期 2006.01.10
申请号 US20030728616 申请日期 2003.12.05
申请人 INTEL CORPORATION 发明人 KLOSTER GRANT M.;STAINTES DAVID;RAMANATHAN SHRIRAM
分类号 H01L29/06;H01L21/56;H01L25/065 主分类号 H01L29/06
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