Method of patterning a mask blank

摘要

A light-block film is formed on a substrate, and a chemically amplified resist film is then formed on the light-block film. The chemically amplified resist film includes a photosensitive acid generator which generates an acid upon irradiation with activating light or radiation, and mainly contains a first resin that becomes soluble in bases by action of the acid. Next, a protective film is formed on the chemically amplified resist film and thereby yields a mask blank. The protective film is formed by dissolving a second resin and the photosensitive acid generator in a solvent that does not substantially dissolve the chemically amplified resist film to prepare a solution, and applying the solution to the chemically amplified resist film.