发明名称 |
METHOD FOR REMOVING SILICON OXIDE FILM AND PROCESSING APPARATUS |
摘要 |
A method for removing a silicon oxide film is disclosed which enables to efficiently remove a silicon oxide film such as a natural oxide film or a chemical oxide film at a temperature considerably higher than room temperature. In the method for removing a silicon oxide film formed on the surface of an object (W) to be processed within an evacuatable process chamber (18), the silicon oxide film is removed by using a mixed gas of HF gas and NH3 gas. By using the mixed gas of HF gas and NH3 gas, the silicon oxide film formed on the surface of the object can be efficiently removed.
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申请公布号 |
KR20060002805(A) |
申请公布日期 |
2006.01.09 |
申请号 |
KR20057016676 |
申请日期 |
2004.04.20 |
申请人 |
TOKYO ELECTRON LIMITED |
发明人 |
HASEBE KAZUHIDE;OKADA MITSUHIRO;CHIBA TAKASHI;OGAWA JUN |
分类号 |
H01L21/302;H01L21/3065;H01L21/311 |
主分类号 |
H01L21/302 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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