MEMORY CELL TRANSISTOR WITH ASYMMETRY SOURCE/DRAIN AND MANUFACTURING METHOD THERE OF,申请号KR20040050301-传众专利搜索

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发明名称	MEMORY CELL TRANSISTOR WITH ASYMMETRY SOURCE/DRAIN AND MANUFACTURING METHOD THERE OF
摘要
申请公布号	KR20060001230(A)	申请公布日期	2006.01.06
申请号	KR20040050301	申请日期	2004.06.30
申请人	HYNIX SEMICONDUCTOR INC.	发明人	LEE, NAM JAE
分类号	H01L21/336	主分类号	H01L21/336
代理机构		代理人
主权项
地址

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