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发明名称
PHASE-CHANGE MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME
摘要
申请公布号
KR20060001103(A)
申请公布日期
2006.01.06
申请号
KR20040050131
申请日期
2004.06.30
申请人
HYNIX SEMICONDUCTOR INC.
发明人
CHANG, HEON YONG
分类号
H01L27/115
主分类号
H01L27/115
代理机构
代理人
主权项
地址
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