PHASE CHANGE RAM DEVICE AND METHOD OF MANUFACTURING THE SAME,申请号KR20040050071-传众专利搜索

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发明名称	PHASE CHANGE RAM DEVICE AND METHOD OF MANUFACTURING THE SAME
摘要
申请公布号	KR20060001054(A)	申请公布日期	2006.01.06
申请号	KR20040050071	申请日期	2004.06.30
申请人	HYNIX SEMICONDUCTOR INC.	发明人	CHANG, HEON YONG
分类号	H01L27/115;H01L21/8247	主分类号	H01L27/115
代理机构		代理人
主权项
地址

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