| 摘要 |
The invention relates to a method for the treatment of a surface of a metal-carbide substrate, said metal-carbide substrate being used in semiconductor manufacturing processes. The invention also relates to a metal-carbide substrate for use in semiconductor manufacturing processes treated with to the method according to the invention. According to the invention said method comprising the steps of selective etching the surface of said metal-carbide substrate using a reactive gas mixture thereby creating a carbon surface layer on said metal-carbide substrate, and removing said carbon surface layer being created on said metal-carbide substrate. Thus with the method steps according to the invention metal-carbide substrates can be obtained with a surface structure that complies with the highest standards as regard to dimensions and purity as required in semiconductor manufacturing processes. Especially metal-carbide substrates treated according to the steps of the invention are highly suitable for use as wafer boats for handling and containing semiconductor wafers on which subsequent treatment process steps of the semiconductor manufacturing processes (such as semiconductor layer deposition or temperature annealing) are performed under accurate, well controlled working conditions (temperature, pressure and vacuum). |
