发明名称 |
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME |
摘要 |
<p>A semiconductor device and related method of manufacture are disclosed. The semiconductor device comprises a gate electrode formed on a semiconductor substrate, an active region containing spaces formed below the gate electrode, a channel region formed between the gate electrode and the spaces, and source and drain regions formed on opposite sides of the gate electrode within the active region. The spaces are formed by etching a semiconductor layer formed below the gate electrode in the active region.</p> |
申请公布号 |
KR20060000276(A) |
申请公布日期 |
2006.01.06 |
申请号 |
KR20040049004 |
申请日期 |
2004.06.28 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE, SUNG YOUNG;SHIN, DONG SUK |
分类号 |
H01L29/78;H01L21/00;H01L21/336;H01L27/01;H01L29/786 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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