发明名称 |
METHOD OF MANUFACTURING THIN FILM PANEL |
摘要 |
<p>A method of manufacturing a thin film transistor panel is provided, which includes forming a first signal line on a substrate. The method also includes forming in sequence a first insulating layer and a semiconductor layer on the first signal line. The method further includes patterning the semiconductor layer and the first insulating layer through one photolithography process to form a patterned semiconductor layer and a patterned first insulating layer. The method also includes forming a second signal line on the patterned semiconductor layer and the patterned first insulating layer.</p> |
申请公布号 |
KR20060000639(A) |
申请公布日期 |
2006.01.06 |
申请号 |
KR20040049566 |
申请日期 |
2004.06.29 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM, BO SUNG;LEE, YONG UK |
分类号 |
H01L29/786;G02F1/1362;H01L21/00;H01L21/77;H01L27/32 |
主分类号 |
H01L29/786 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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