发明名称 METHOD OF MANUFACTURING THIN FILM PANEL
摘要 <p>A method of manufacturing a thin film transistor panel is provided, which includes forming a first signal line on a substrate. The method also includes forming in sequence a first insulating layer and a semiconductor layer on the first signal line. The method further includes patterning the semiconductor layer and the first insulating layer through one photolithography process to form a patterned semiconductor layer and a patterned first insulating layer. The method also includes forming a second signal line on the patterned semiconductor layer and the patterned first insulating layer.</p>
申请公布号 KR20060000639(A) 申请公布日期 2006.01.06
申请号 KR20040049566 申请日期 2004.06.29
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KIM, BO SUNG;LEE, YONG UK
分类号 H01L29/786;G02F1/1362;H01L21/00;H01L21/77;H01L27/32 主分类号 H01L29/786
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